FQD13N10LTM دیتاشیت

FQD13N10LTM

مشخصات دیتاشیت

نام دیتاشیت FQD13N10LTM
حجم فایل 79.533 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FQD13N10LTM

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQD13N10LTM
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;40W
  • Total Gate Charge (Qg@Vgs): 12nC@5V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 520pF@25V
  • Continuous Drain Current (Id): 10A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@10V,5A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FQD1
  • detail: N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak

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